A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2019
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2019.2915768